(China (Mainland))
Product Summary
The GA100TS60U is an Ultra-Fast Speed IGBT.
Parametrics
GA100TS60U absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃ Continuous Collector Current 100; (3)ICM Pulsed Collector Current 200 A; (4)ILM Peak Switching Current 200A; (5)IFM Peak Diode Forward Current 200A; (6)VGE Gate-to-Emitter Voltage: 20 V; (7)VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min: 2500V; (8)PD @ TC = 25℃ Maximum Power Dissipation 320 W; (9)PD @ TC = 85℃ Maximum Power Dissipation 170; (10)TJ Operating Junction Temperature Range -40 to +150 ℃; (11)TSTG Storage Temperature Range -40 to +125℃.
Features
GA100TS60U features: (1)Generation 4 IGBT technology; (2)UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode; (3)Very low conduction and switching losses; (4)HEXFREDantiparallel diodes with ultra- soft recovery; (5)Industry standard package; (6)UL recognition pending.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 GA100TS60U |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||
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GA10SHT12-263 |
GeneSiC Semiconductor |
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Data Sheet |
Negotiable |
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GA10SHT12-247 |
GeneSiC Semiconductor |
Schottky (Diodes & Rectifiers) 1200V 10A Schottky Rectifier |
Data Sheet |
Negotiable |
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GA10SHT12-220 |
GeneSiC Semiconductor |
Schottky (Diodes & Rectifiers) 1200V 10A Schottky Rectifier |
Data Sheet |
Negotiable |
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GA100TS60U |
Other |
|
Data Sheet |
Negotiable |
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GA1085 |
Other |
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Data Sheet |
Negotiable |
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GA100TS60SQ |
Other |
|
Data Sheet |
Negotiable |
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