(China (Mainland))
Product Summary
The PTF10111 is a 6 watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
Parametrics
PTF10111 absolute maximum ratings: (1)Drain-Source Voltage VDSS: 65 Vdc; (2)Gate-Source Voltage VGS: ±20 Vdc; (3)Operating Junction Temperature TJ: 200℃; (4)Total Device Dissipation PD: 36 Watts; (5)Storage Temperature Range TSTG: –40 to +150℃; (6)Thermal Resistance (TCASE = 70℃) RθJC: 4.8℃/W.
Features
PTF10111 features: (1)Performance at 1.5 GHz, 28 Volts, Output Power = 6 Watts, Efficiency = 50% Typ, Power Gain = 16 dB Typ; (2)Full Gold Metallization; (3)Silicon Nitride Passivated; (4)100% Lot Traceability.
Diagrams
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 PTF10009SP |
TriQuint Semiconductor |
RF Amplifier RF LDMOS Transistor |
Data Sheet |
Negotiable |
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PTF10041 |
TriQuint Semiconductor |
RF Amplifier RF LDMOS Transistor |
Data Sheet |
Negotiable |
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PTF10043 |
TriQuint Semiconductor |
RF Amplifier RF LDMOS Transistor |
Data Sheet |
Negotiable |
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PTF10052 |
TriQuint Semiconductor |
RF Amplifier RF LDMOS Transistor |
Data Sheet |
Negotiable |
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PTF10053 |
TriQuint Semiconductor |
RF Amplifier RF LDMOS Transistor |
Data Sheet |
Negotiable |
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PTF10107 |
TriQuint Semiconductor |
RF Amplifier RF LDMOS Transistor |
Data Sheet |
Negotiable |
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