Product Summary
The IRFP450 is a power MOSFET. It is designed using the company’s consolidated strip layout-basedMESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. The applications of the IRFP450 are high current switching, uninterruptible power supply (ups), dc/dc coverters for telecom, industrial, and lighting equipment.
Parametrics
IRFP450 absolute maximum ratings: (1)Drain-source Voltage (VGS =0):500 V; (2)Drain- gate Voltage (RGS =20kΩ):500 V; (3)Gate-source Voltage:± 20 V; (4)Drain Current (continuous) at Tc =25℃:14A; (5)Drain Current (continuous) at Tc =100℃:8.7A; (6)Drain Current (pulsed):56 A; (7)Total Dissipation at Tc =25:190W; (8)Derating Factor:1.5 W/℃; (9)Peak Diode Recovery voltage slope 3.5 V/ns; (10)Storage Temperature -65℃ to 150℃; (11)Max. Operating Junction Temperature 150℃.
Features
IRFP450 features: (1)typical RDS(on) = 0.33Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)very low intrinsic capacitances; (5)gatecharge minimized.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRFP450 |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFP450, SiHFP450 |
Other |
Data Sheet |
Negotiable |
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IRFP450A |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFP450_R4943 |
Fairchild Semiconductor |
MOSFET TO-247 N-Ch Power |
Data Sheet |
Negotiable |
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IRFP450A_R4944 |
Fairchild Semiconductor |
MOSFET TO-3P |
Data Sheet |
Negotiable |
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IRFP450A, SiHFP450A |
Other |
Data Sheet |
Negotiable |
|
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IRFP450LCPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFP450APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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