(China (Mainland))
Product Summary
The 2SB778 is a PNP planar silicon transistor.
Parametrics
2SB778 absolute maximum ratings: (1)Collector-Base Voltage, VCBO: -120V; (2)Collector-Emitter Voltage, VCEO: -120V; (3)Emitter-Base voltage, VEBO: -6V; (4)Collector Current (DC), IC: -10A; (5)Collector Dissipation, PC: 80W; (6)Junction Temperature, Tj: 150℃; (7)Storage Temperature, Tstg: -55 to 150℃.
Features
2SB778 features: (1)High Current Capability; (2)High Power Dissipation.
Diagrams
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 2SB778 |
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2SB708 |
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2SB709A |
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2SB710 |
Other |
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Negotiable |
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2SB710A |
Other |
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Negotiable |
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2SB713 |
Other |
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Negotiable |
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