Product Summary

The FF200R33KF2C is an IGBT module.

Parametrics

FF200R33KF2C absolute maximum ratings: (1)collector-emitter voltage:3300V; (2)DC-collector current:TC=80℃:200A, TC=25℃:330A; (3)repetitive peak collector current:400A; (4)total power dissipation:2.20kW; (5)gate-emitter peak voltage:±20V.

Features

FF200R33KF2C features: (1)gate charge:4uC; (2)internal gate resistor:2.5Ω; (3)input capacitance:25.0nF; (4)reverse transfer capacitance:1.40nF; (5)collector-emitter cut-off current:5.0mA; (6)gate-emitter leakage current:400nA; (7)SC data:1000A; (8)thermal resistance, junction to case:57.0K/kw; (9)thermal resistance, case to heatsink:49.0K/kw.

Diagrams

FF200R33KF2C circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FF200R33KF2C
FF200R33KF2C
Infineon Technologies
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Data Sheet
0-1: $523.71
1-3: $471.34
3-5: $418.97
5-10: $392.78
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(USD)		 Quantity
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