(China (Mainland))
Product Summary
The 20N60C3 is a cool MOS power transistor.
Parametrics
20N60C3 absolute maximum ratings: (1)contimuous drain current, ID: 20.7A when TC=25℃; 13.1A when TC=100℃; (2)pulsed drain current, tp limited by Tjmax, ID puls: 62.1A; (3)avalanche energy, single pulse, ID=10A, VDD=50V, EAS: 690mJ; (4)avalanche energy, repetitive tAR limited by Tjmax, ID=20A, VDD=50V, EAR: 1mJ; (5)avalanche current, repetitive tAR limited by Tjmax, IAR: 20A; (6)reverse diode dv/dt, dv/dt: 15V/ns; (7)gate source voltage static, VGS: ±30V; (8)power dissipation, TC=25℃, Ptot: 208W; (9)operating and storage temperature, Tj, Tstg: -55 to 150℃; (10)drain source voltage slope, VDS=480V, ID=20.7A, Tj=125℃, dv/dt: 50V/ns.
Features
20N60C3 features: (1)new revolutionary high voltage technology; (2)ultra low gate charge; (3)periodic avalanche rated; (4)extreme dv/dt rated; (5)high peak current capability; (6)improved transconducatance; (7)Pb-free lead plating; RoHS compliant; (8)qualified according to JEDEC for target applications.
Diagrams
 |
 20N60BD1 |
Other |
|
Data Sheet |
Negotiable |
|
||||
