RA13H3340M

Product Summary

Drain Voltage(VDD)(Max.ratings): 17V(VGG < 5V)
? Gate Voltage(VGG)(Max.ratings): 6V(VDD < 12.5V , Pin = 0mW)
? Input Power(Pin)(Max.ratings): 100mW(f = 330-400MHz , ZG = ZL = 50Ω)
? Output Power(Pout)(Max.ratings): 20W(f = 330-400MHz , ZG = ZL = 50Ω)
? Frequency Range(f): 330-400MHz
? Drain Voltage(VDD): 12.5V
? Input Power(Pin): 50mW
? Output Power(Pout)(Min): 13W(VDD = 12.5V , VGG = 5V , Pin = 50mW)
? Total Efficiency(ηT)(Min): 40%(VDD = 12.5V , VGG = 5V , Pin = 50mW)
? Gata Current(IGG)(Typ): 1mA(VDD = 12.5V , VGG = 5V , Pin = 50mW)
? Operation Case Temperature Range(Tcase)(op): -30°C to +110°C
? Storage Temperature(Tstg): -40°C to +110°C
? Brand Name: MITSUBISHI
? Mounting Type: Through Hole / DIP(Dual in -line package)
? Package Outline: H2S
? Lead Count: 5
? Packing: Antistatic tray , 10 modules / tray
? Compatible with many other wireless communication products
? Mass stock on-hand merchandise supply
? We supply various electronic components and welcome your inquiries

Parametrics

Silicon RF Power Semiconductors
? 12.5V Operation High Output Power Si MOS FET Modules
? High Frequency Devices
? Si Power RF Module
? The RA13H3340M is a 13-watt RF MOSFET Amplifier Modules for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage(VGG = 0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V(minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V(typical) and 5V(maximum). At VGG = 5V, the typical gate current is 1mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power

Features

Lead-Free Type
? RoHS Compliant
? Enhancement-Mode MOSFET Transistors (IDD ? 0 @ VDD = 12.5V, VGG = 0V)
? Pout > 13W, ηT > 40% @ VDD = 12.5V, VGG = 5V, Pin = 50mW
? Broadband Frequency Range: 330-400MHz
? Low-Power Control Current IGG = 1mA (typ) at VGG = 5V
? Module Size: 66 x 21 x 9.88 mm
? Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

Diagrams

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