(China (Mainland))
Product Summary
The MRF317 is an NPN silicon RF power transistor. It is designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.
Parametrics
MRF317 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 35 Vdc; (2)Collector–Base Voltage VCBO: 65 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 12Adc; Collector Current — Peak (10 seconds) IC: 18Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 270W; Derate above 25℃ PD: 1.54W/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃.
Features
MRF317 features: (1)Guaranteed Performance at 150 MHz, 28 Vdc; Output Power = 100 W; Minimum Gain = 9.0 dB; (2)Built-in Matching Network for Broadband Operation; (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (4)Gold Metallization System for High Reliability; (5)High Output Saturation Power-Ideally Suited for 30 W Carrier/120 W Peak AM Amplifier Service; (6)Guaranteed Performance in Broadband Test Fixture.
Diagrams
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 MRF317 |
Other |
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Data Sheet |
Negotiable |
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