Product Summary
The IRFZ46N is an Advanced HEXFET Power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFZ46N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFZ46N absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 53A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 37 A; (3)IDM Pulsed Drain Current: 180A; (4)PD @TC = 25℃ Power Dissipation: 107 W; (5)Linear Derating Factor: 0.71 W/℃; (6)VGS Gate-to-Source Voltage: ± 20 V; (7)IAR Avalanche Current: 28 A; (8)EAR Repetitive Avalanche Energy: 11 mJ; (9)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (10)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 175℃; (11)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case ).
Features
IRFZ46N features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFZ46N |
International Rectifier |
MOSFET MOSFET, 55V, 46A, 16.5 mOhm, 48 nC Qg, TO-220AB |
Data Sheet |
Negotiable |
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IRFZ46NL |
MOSFET N-CH 55V 53A TO-262 |
Data Sheet |
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IRFZ46NLPBF |
International Rectifier |
MOSFET MOSFT 55V 53A 16.5mOhm 48nC |
Data Sheet |
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IRFZ46NPBF |
International Rectifier |
MOSFET MOSFT 55V 46A 16.5mOhm 48nC |
Data Sheet |
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IRFZ46NSPBF |
International Rectifier |
MOSFET 55V Single N-Channel HEXFET Power MOSFET |
Data Sheet |
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IRFZ46NS |
MOSFET N-CH 55V 53A D2PAK |
Data Sheet |
Negotiable |
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IRFZ46NSTRLPBF |
International Rectifier |
MOSFET MOSFT 55V 53A 16.5mOhm 48nC |
Data Sheet |
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IRFZ46NSTRL |
MOSFET N-CH 55V 53A D2PAK |
Data Sheet |
Negotiable |
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