(China (Mainland))
Product Summary
The MG100J2YS50 is a silicon N channel IGBT. The applications of the device include high power switching applications and motor control applications.
Parametrics
MG100J2YS50 absolute maximum ratings: (1)collector-emitter voltage, VCES: 600V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, DC, IC: 100A; 1ms, ICP: 200A; (4)forward current, DC, IF: 100A; 1ms, IFM: 200A; (5)collellector power dissipation (Tc=25℃), PC: 450W; (6)junction temperature, Tj: 150℃; (7)storage temperature range, Tstg: -40 to 125℃; (8)isolation voltage, Visol: 2500V; (9)screw torque: 3/3Nm.
Features
MG100J2YS50 features: (1)The electrodes are isolated from case; (2)high input impedance; (3)includes a complete half bridege in one package; (4)high speed: tf=0.30μs max (IC=100A); trr=0.15μs max (IF=100A); (5)low saturation voltage: VCE(sat)=2.70V max (IC=100A).
Diagrams
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 MG1000E |
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MG1001 |
Other |
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Negotiable |
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MG1001E |
Other |
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Negotiable |
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MG1002E |
Other |
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Negotiable |
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MG1004 |
Other |
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Negotiable |
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MG1004E |
Other |
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Negotiable |
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