(China (Mainland))
Product Summary
The FQA9N90C is an N-Channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA9N90C is well suited for high efficiency switch mode power supplies.
Parametrics
FQA9N90C absolute maximum ratings: (1)VDSS Drain-Source Voltage: 900 V; (2)ID Drain Current - Continuous (TC = 25℃): 9.0 A; (3)- Continuous (TC = 100℃): 5.7 A; (4)IDM Drain Current - Pulsed: 36.0 A; (5)VGSS Gate-Source Voltage: ± 30 V; (6)EAS Single Pulsed Avalanche Energy: 900 mJ; (7)IAR Avalanche Current: 9.0 A; (8)EAR Repetitive Avalanche Energy: 28 mJ; (9)dv/dt Peak Diode Recovery dv/dt: 4.0 V/ns; (10)PD Power Dissipation (TC = 25℃): 280 W; (11)TJ, TSTG Operating and Storage Temperature Range: -55 to +150℃; (12)TL; (13)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.
Features
FQA9N90C features: (1)9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V; (2)Low gate charge ( typical 45 nC); (3)Low Crss ( typical 14 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
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 FQA9N90C |
Fairchild Semiconductor |
MOSFET 900V N-Channel Q-FET |
Data Sheet |
Negotiable |
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FQA9N90C_F109 |
Fairchild Semiconductor |
MOSFET 900V N-Channel QFET |
Data Sheet |
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