Product Summary
The CM200DY-12H is a dual IGBTMOD. It is designed for use in switching applications. The CM200DY-12H consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. The applications of the CM200DY-12H are AC Motor Control, Motion/Servo Control, UPS, Welding Power Supplies, Laser Power Supplies.
Parametrics
CM200DY-12H absolute maximum ratings: (1)Junction Temperature:–40℃ to 150℃; (2)Storage Temperature:–40℃ to 125℃; (3)Collector-Emitter Voltage:600 Volts; (4)Gate-Emitter Voltage:±20 Volts; (5)Collector Current:200 Amperes; (6)Peak Collector Current:400 Amperes; (7)Diode Forward Current:200 Amperes; (8)Diode Forward Surge Current:400 Amperes; (9)Power Dissipation:780 Watts; (10)Max. Mounting Torque M5 Terminal Screws:17 in-lb; (11)Max. Mounting Torque M6 Mounting Screws:26 in-lb; (12)Module Weight (Typical):270 Grams; (13)V Isolation:2500 Volts.
Features
CM200DY-12H features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery(70ns) Free-Wheel Diode; (4)High Frequency Operation(20-25kHz); (5)Isolated Baseplate for Easy Heat Sinking.
Diagrams

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                            ![]() IGBT MOD DUAL 600V 200A H SER  | 
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                            ![]() CM2009-00QR  | 
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                            ![]() CM200C-32.768KAZF-UT  | 
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                            ![]() Crystals 32.768K 30ppm 12.5pF  | 
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